六合彩直播开奖

• Corporate update

• Overview of Industry and TCAD trends 
  TCAD Updates 

• Materials, Device, Process 
• New Examples Highlights on: 
  • Logic: GAA nanosheet band alignment using advanced ab-initio methods  
  • FE-NAND: Aluminium dopants in HfO2 affect polarization model parameters. 
  • 3D-NAND: Defects and trap levels in amorphous an polycrystalline silicon 
  • Device: Thermal conductivities in thin-film stacks using machine-learned force fields 
  • Process: Atomistic modelling of chlorine plasma assisted ALE of MoS2 
  • Process: Atomistic modelling of MoS2 etch via physical sputtering with Ne/Ar/Xe ions 

• Building Chip Level Hot Spot Module for the stress migration with FEM and Machine Learning?

• Calibration workflow for CMOS and advanced logic 
• TEM/SEM metrology analysis in SCW (A-Image) 
• HAR surrogate model. Workflow to generate HAR etch ML model in Sentaurus Calibration Workbench (SCW). ML Api for custom model integration in SCW 
• IGBT ML process optimization example (updated version with GUI) 

• Utilization of Multi-X simulation for semiconductor development

• Emulation for process integration and margin analysis for systematic, stochastic, and multivariate process variations 
• Physics-based unit process modeling for high-aspect-ratio etch and deposition module optimization 
• ML/AI models for process engineers 

• Technology trends in advanced logic, memory, and power semiconductor 
• Logic: Exploration for logic technology options, such as CFET, BSPDN, and 3DIC, in terms of PPA, thermal, and stress 
• Memory: Pathfinding for DRAM scaling options, such as 4F2 and 3D stacking, in terms of process architecture and device properties, such as floating body effect, retention, and row hammer 
• Power: Recent advances in power DTCO for Si, SiC, and GaN simulations from TCAD to circuit. 

• Corporate update 

TCAD Overview 

• Overview of Industry and TCAD trends 
• TCAD Updates 

• Simulation study of 3D memory characteristics encompassing TCAD and Ab Initio calculation 

• Materials, Device, Process 
• New Examples Highlights on: 
  • Logic: GAA nanosheet band alignment using advanced ab-initio methods  
  • FE-NAND: Aluminium dopants in HfO2 affect polarization model parameters. 
  • 3D-NAND: Defects and trap levels in amorphous an polycrystalline silicon 
  • Device: Thermal conductivities in thin-film stacks using machine-learned force fields 
  • Process: Atomistic modelling of chlorine plasma assisted ALE of MoS2 
  • Process: Atomistic modelling of MoS2 etch via physical sputtering with Ne/Ar/Xe ions 

• Calibration  

• Calibration workflow for CMOS and advanced logic 
• TEM/SEM metrology analysis in SCW (A-Image) 
• HAR surrogate model. Workflow to generate HAR etch ML model in Sentaurus Calibration Workbench (SCW). ML Api for custom model integration in SCW 
• IGBT ML process optimization example (updated version with GUI) 

• Emulation for process integration and margin analysis for systematic, stochastic, and multivariate process variations 
• Physics-based unit process modeling for high-aspect-ratio etch and deposition module optimization 
• ML/AI models for process engineers

• Technology trends in advanced logic, memory, and power semiconductor 
• Logic: Exploration for logic technology options, such as CFET, BSPDN, and 3DIC, in terms of PPA, thermal, and stress 
• Memory: Pathfinding for DRAM scaling options, such as 4F2 and 3D stacking, in terms of process architecture and device properties, such as floating body effect, retention, and row hammer 
• Power: Recent advances in power DTCO for Si, SiC, and GaN simulations from TCAD to circuit.